TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of its new 200Gbps PIN-photodiode (PD) chip for use in next-generation optical transceivers to support 800Gbps and 1.6Tbps fiber communication from October 1 this year. The addition of the new receiver chip to Mitsubishi Electric’s optical device lineup will enable existing devices capable of transmitting at 800Gbps/1.6Tbps to newly receive optical data at these same speeds, thereby expanding the communication capacity of optical transceivers, including for high-speed, high-capacity communication in data centers.
The upcoming introduction of the 200Gbps PIN-PD chip for optical reception follows Mitsubishi Electric’s launch of a mass-produced chip for optical transmission, the 200Gbps (112Gbaud four-level pulse-amplitude modulation [PAM4]) electro-absorption modulator laser diode (EML), in April this year. Leveraging the company’s well-established expertise in optical devices, the newly announced PD chip was developed by minimizing the photoelectric conversion area within a chip structure that integrates backside illumination and a convex lens.
Product Features
1) Backside illumination and convex lens integrated for high-speed, high-capacity communication in data centers
- The chip structure integrates backside illumination and a light-accumulating convex lens that minimizes the photoelectric conversion area, resulting in low capacitance to enable high-speed 200Gbps transmission (112Gbaud PAM4), twice that of conventional mainstream products (100Gbps).
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