Footprint Compatible Packaged GaN Family Expands to 150 V for Flexible Design of High-Power Density Applications
Footprint Compatible Packaged GaN Family Expands to 150 V for Flexible Design of High-Power Density Applications
Efficient Power Conversion (EPC) introduces the 150 V, 6 mΩ EPC2308 GaN FET, offering higher performance and smaller solution size for high power density applications including DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.
EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC, the world’s leader in enhancement-mode gallium nitride (eGaN®) power FETs and ICs, expands the selection of off-the-shelf GaN FETs in thermally enhanced QFN packages with the introduction of the 150 V EPC2308 designed for motor drive in power tools and robots, high density DC-DC from/to 80 V-100 V for industrial applications, synchronous rectification to 28 V – 54 V for chargers, adaptors and power supplies, smartphones USB fast chargers, and in solar optimizers and microinverters.
The EPC2308 GaN FET offers a super small RDS(on), of just 4.9 mOhm typical, together with very small QG, QGD, and QOSS parameters for low conduction and switching losses. The device features a thermally enhanced QFN package with footprint of just 3 mm x 5 mm, offering an extremely small solution size for the highest power density applications.
The package offers wettable flanks to simplify assembly and inspection and exposed top and ultra-low thermal resistances to optimize thermal dissipation through heatsink for cooler operations.
The EPC2308 is footprint compatible with the previously released 100 V, 1.8 mOhm EPC2302 and the 100 V, 3.8 mOhm EPC2306.
“The EPC2308 combines the advantages of 150 V GaN with an easy to assemble and thermally enhanced QFN package,” said Alex Lidow, CEO and co-founder of EPC. “Designers can use our family of packaged GaN FETs to make smaller and lighter weight battery-operated BLDC motor drives for robotics and power tools, higher efficiency 80 V input DC-DC converters, and higher efficiency USB chargers and power supply.”
Development Board
The EPC90148 development board is a half bridge featuring EPC2308 GaN FET. It is designed for 150 V maximum device voltage and 12 A maximum output current. The purpose of this board is to simplify the evaluation process to speed time to market. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.
Price and Availability
The EPC2308 is priced at $3.75 each in 1 Ku volumes.
The EPC90148 development board is priced at $200.00 each.
All devices and boards are available for immediate delivery from Digi-Key at https://www.digikey.com/en/supplier-centers/epc
Designers interested in replacing their silicon MOSFETs with a GaN solution can use the EPC GaN Power Bench’s cross-reference tool to find a suggested replacement based on their unique operating conditions. The cross-reference tool can be found at: https://epc-co.com/epc/design-support/part-cross-reference-search
About EPC
EPC is the leader in enhancement mode gallium nitride (eGaN®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, and drones, and low-cost satellites.
Visit our web site: www.epc-co.com
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Contacts
Efficient Power Conversion
Renee Yawger
908.475.5702
renee.yawger@epc-co.com
