Ultra-Low On-Resistance 100 V and 200 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space Applications

EPC Space expands its radiation-hardened (rad-hard) gallium nitride (GaN) transistor family for critical spaceborne and other high reliability environments.

ANDOVER, Mass.--(BUSINESS WIRE)--EPC Space announces the introduction two new rad-hard GaN transistors with ultra-low on-resistance and extremely low gate charge for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET. These devices come packaged in hermetic packages in very small footprints. Chip-scale versions of this device are available from EPC.

Part Number	Drain to Source Voltage (VDS)	Drain to Source Resistance (RDS(on))	Single- Pulse Drain Current (IDM)	Package Size (mm)	Total Dose for Space Level Applications	Single Event (with VDS up to 100% of rated Breakdown) for Space Level Applications
EPC7018G	100 V	6 mΩ	345 A	8.0 x 5.6	Rated to 1000 krad	SEE immunity for LET of 85 MeV/mg/cm^2
EPC7007B	200 V	28 mΩ	80 A	5.7 x 3.9	Rated to 1000 krad	SEE immunity for LET of 85 MeV/mg/cm^2

With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.

Applications benefiting from the performance of these products include DC-DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.

“These two new additions to our rad-hard product line offer designers high power, ultra-low on-resistance solutions enabling a generation of power conversion and motor drives in space operating at higher efficiencies, and greater power densities than what is achievable with traditional silicon-based rad-hard solutions,” said Bel Lazar, CEO of EPC Space.

Price & Availability

EPC7018G and EPC7007B:
500 units pricing of $ $212.80/ea for engineering models and $315.84/ea for space level grade.

Contact factory for availability and delivery.

About EPC Space

EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation-hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.