KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added the “TRSxxx120Hx Series” of 1200V products to its lineup of third-generation silicon carbide (SiC) Schottky barrier diodes (SBD) for industrial equipment, such as photovoltaic inverters, EV charging stations and switching power supplies. Toshiba today started shipments of the ten new products in the series, five in a TO-247-2L package and five in a TO-247 package.
The new TRSxxx120Hx Series are 1200V products that use the improved junction-barrier Schottky (JBS) structure[1] of Toshiba’s third-generation 650V SiC SBD. Use of a new metal in the junction barrier allows the new products to achieve industry-leading [2] low forward voltage of 1.27V (typ.), low total capacitive charge and low reverse current. This significantly reduces equipment power loss in more higher power applications.
Toshiba will continue to expand its SiC power device lineup, and to focus on improving efficiency that reduces power loss in industrial power equipment.
Notes:
[1] Improved JBS Structure: A structure that incorporates the Merged PiN Schottky (MPS) structure, which reduces forward voltage at high currents, into the JBS structure, which lowers the electric field at the Schottky interface and reduces current leakage.
[2] Among 1200V SiC SBDs. As of September 2024, Toshiba survey.
Applications
- Photovoltaic inverters
- EV charging stations
- Switching power supplies for industrial equipment, UPS
Features
- Third-generation 1200 V SiC SBD
- Industry-leading[2] low forward voltage: VF＝1.27V (typ.) (IF=IF(DC))
- Low total capacitive charge: QC=109nC (typ.) (VR=800V, f=1MHz) for TRS20H120H
- Low reverse current: IR＝2.0μA (typ.) (VR=1200V) for TRS20H120H
Main Specifications |
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(Unless otherwise specified, Ta =25°C) |
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Part number |
Package |
Absolute maximum ratings |
Electrical characteristics |
Sample Check & Availability |
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Repetitive peak reverse voltage VRRM (V) |
Forward DC current IF(DC) (A) |
Non-repetitive peak forward surge current IFSM (A) |
Forward voltage (pulse measurement) VF (V) |
Reverse current (pulse measurement) IR (μA) |
Total capacitive charge QC (nC) |
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|
Temperature conditions Tc (°C) |
f=50Hz (half-sine wave, t=10ms), Tc=25°C |
IF=IF(DC) |
VR=1200V |
VR=800V, f=1MHz |
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Typ. |
Typ. |
Typ. |
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TO-247-2L |
1200 |
10 |
160 |
80 |
1.27 |
1.0 |
61 |
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15 |
157 |
110 |
1.4 |
89 |
|||||
20 |
155 |
140 |
2.0 |
109 |
|||||
30 |
150 |
210 |
2.8 |
162 |
|||||
40 |
147 |
270 |
3.6 |
220 |
|||||
TO-247 |
5 (Per leg) 10 (Both legs) |
160 |
40 (Per leg) 80 (Both legs) |
1.27 (Per leg) |
0.5 (Per leg) |
30 (Per leg) |
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7.5 (Per leg) 15 (Both legs) |
157 |
55 (Per leg) 110 (Both legs) |
0.7 (Per leg) |
43 (Per leg) |
|||||
10 (Per leg) 20 (Both legs) |
155 |
70 (Per leg) 140 (Both legs) |
1.0 (Per leg) |
57 (Per leg) |
|||||
15 (Per leg) 30 (Both legs) |
150 |
105 (Per leg) 210 (Both legs) |
1.4 (Per leg) |
80 (Per leg) |
|||||
20 (Per leg) 40 (Both legs) |
147 |
135 (Per leg) 270 (Both legs) |
1.8 (Per leg) |
108 (Per leg) |
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Follow the links below for more on the new products.
TRS10H120H
TRS15H120H
TRS20H120H
TRS30H120H
TRS40H120H
TRS10N120HB
TRS15N120HB
TRS20N120HB
TRS30N120HB
TRS40N120HB
Follow the links below for more on Toshiba's SiC SBDs.
SiC Schottky Barrier Diodes
3rd generation SiC Schottky barrier diode (SBD)
Follow the link below for more on Toshiba’s SiC Power Devices.
SiC Power Devices
To check availability of the new products at online distributors, visit:
TRS10H120H
Buy Online
TRS15H120H
Buy Online
TRS20H120H
Buy Online
TRS30H120H
Buy Online
TRS40H120H
Buy Online
TRS10N120HB
Buy Online
TRS15N120HB
Buy Online
TRS20N120HB
Buy Online
TRS30N120HB
Buy Online
TRS40N120HB
Buy Online
* Company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.
About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.
Its 19,400 employees around the world share a determination to maximize product value, and to promote close collaboration with customers in the co-creation of value and new markets. The company looks forward to building and to contributing to a better future for people everywhere.
Find out more at https://toshiba.semicon-storage.com/ap-en/top.html
