SEOUL, South Korea--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today the release of its new 40V MXT MV MOSFET1. With this latest addition, the Company now offers 13 MOSFET and IGBT products for a wide range of automotive applications (see the tables below).
As the automotive industry adopts advanced technologies such as autonomous driving and enhanced infotainment systems, the demand for high-efficiency power solutions increases. According to Omdia, a global market research firm, the automotive power discrete market is projected to grow 14% annually from 2024 to 2027.
Magnachip entered the automotive sector in April 2022 with its first 40V MOSFET and has since broadened its product offerings by releasing 30V, -40V (P-channel MOSFET2), 60V, and 250V MOSFETs for vehicles. In September 2023, the Company introduced 650V and 1200V IGBTs for positive temperature coefficient heaters and e-compressors for automotive. In the last two years, Magnachip's power products have been integrated into vehicles of major automotive manufacturers in the United States, Korea, Japan and China.
Leveraging its technological capabilities, Magnachip now unveils this 40V MXT MV MOSFET (AMDD040N055RH) in the Decawatt Package (DPAK). The new MOSFET offers exceptional versatility for various automotive applications, such as motor control systems or power seat modules and electric stability control systems for reverse battery protection.
“Magnachip is committed to supplying premium products that meet the evolving demands of the automotive sector,” said YJ Kim, CEO of Magnachip. “Our technical innovation, coupled with a steady supply and a comprehensive range of product offerings, will strengthen our foothold in the automotive industry and broaden our global market presence.”
Magnachip’s automotive MOSFET product family |
|||||||
Product |
VDS [V] |
VGS(th), typ. [V] |
*RDS(ON) [mΩ]
|
Qg, Typ [nC]
|
Package |
AEC-Q101 |
|
Max. |
Typ. |
||||||
AMDV030N150URH |
30 |
1.9 |
15.0 |
11.0 |
8.3 |
PDFN33 |
Qualified |
AMDU040N014VRH |
40 |
3.1 |
1.4 |
1.1 |
71.0 |
PDFN56 |
Qualified |
AMDW040N014VF |
40 |
3.1 |
1.4 |
1.1 |
71.0 |
Sawn on Foil |
Qualified |
AMDW1723F |
40 |
3.0 |
2.0 |
1.6 |
88.3 |
Sawn on Foil |
Qualified |
AMDU040N043VRH |
40 |
3.2 |
4.3 |
3.5 |
23.0 |
PDFN56 |
Qualified |
AMDD040N055RH |
40 |
3.2 |
5.5 |
4.3 |
24.0 |
DPAK |
Qualified |
AMDUA040N070RH |
40 |
3.2 |
7.0 |
6.1 |
24.0 |
PDFN56 Dual |
Qualified |
AMDD040P069RH |
-40 |
-1.8 |
6.9 |
6.2 |
91.0 |
DPAK |
Qualified |
AMDW06N021F |
60 |
2.3 |
2.8 |
2.1 |
243.0 |
Sawn on Foil |
Qualified |
AMDD14N25CRH |
250 |
3.0 |
280.0 |
220.0 |
20.0 |
DPAK |
Qualified |
*RDS(on)_max: the maximum resistance of MOSFETs during on-state operation
Magnachip’s automotive IGBT product family |
||||||
Product |
VCES |
IC |
IC, max. |
Package |
Option |
AEC-Q101 |
AMBQ40T65PHRTH |
650V |
40A |
60A |
TO247 |
Diode co-pak |
Qualified |
AMBQ40T120RFRTH |
1200V |
40A |
60A |
TO247 |
Diode co-pak |
Qualified |
AMBQ40T120RRTH |
1200V |
40A |
60A |
TO247 |
None (Diode) |
Qualified |
Related Links
Please find further details and datasheet about Magnachip’s Automotive Solutions at https://www.magnachip.com/automotive-solutions.
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About Magnachip Semiconductor
Magnachip is a designer and manufacturer of analog and mixed-signal semiconductor platform solutions for communication, Internet of Things (“IoT”), consumer, computing, industrial and automotive applications. The Company provides a broad range of standard products to customers worldwide. Magnachip, with more than 40 years of operating history, owns a portfolio of approximately 1,100 registered patents and pending applications, and has extensive engineering, design and manufacturing process expertise. For more information, please visit www.magnachip.com. Information on or accessible through Magnachip’s website is not a part of, and is not incorporated into, this release.
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1 MXT MV MOSFET (Magnachip eXtreme Trench Medium Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 40~200V trench MOSFETs
2 P-channel MOSFET: A P-channel MOSFET requires the gate voltage to be lower than the source to turn on, in contrast to an N-channel MOSFET. Therefore, the drain-source voltage is generally expressed as a negative value (ex. -40V).
