TOKYO--(BUSINESS WIRE)--Toshiba Corporation’s (TOKYO:6502) Semiconductor & Storage Products Company today announced the launch of "TPD7104F", a 1-channel high-side N-channel power MOSFET gate driver. The new product is an all-in-one circuit for charge pumps and can be operated at lower voltages compared to Toshiba conventional products[1], at VDD(opr) = 5 to 18V. Shipment starts from today.
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Key Specifications of the New Product |
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| 1. | BiCD 0.13μm process | |
| 2. | Supply voltage: VDD(opr)=5 to 18V | |
| 3. | Built-in overcurrent protection functions | |
| 4. | Built-in overcurrent diagnostic functions | |
| 5. | Output voltage | |
| VOUT=VDD+8V(Min)@VDD=5V, IOUT=-100μA, Tj=-40 to 125°C | ||
| VOUT=VDD+10V(Min)@VDD=8 to 18V, IOUT=-100μA, Tj=-40 to 125°C | ||
| 6. | Small package | |
| PS-8 (2.8mm x 2.9mm) | ||
Applications
Automotive applications
for driving high-side N-channel MOSFETs used in 12V batteries, including
semiconductor relays and semiconductor load switches for idle stop
systems and electric power steering (EPS).
Notes:
[1] Comparison with “TPD7102F” (VDD=7 to 18V)
Follow this link for more on Toshiba MOSFETs.
http://toshiba.semicon-storage.com/ap-en/product/mosfet.html
Customer Inquiries:
Automotive Sales & Marketing Department
Tel:
+81-3-3457-3428
Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.
About Toshiba
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channels world-class capabilities in advanced electronic and electrical
product and systems into five strategic business domains: Energy &
Infrastructure, Community Solutions, Healthcare Systems & Services,
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worldwide, with annual sales surpassing 6.5 trillion yen (US$63 billion).
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