DUBLIN--(BUSINESS WIRE)--Research and Markets(http://www.researchandmarkets.com/research/f82efc/nanoscaled_semicon) has announced the addition of the "Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices" report to their offering.
Series: Advanced Materials Research, Volume 276
Selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine
This special collection covers: 1. the technology of semiconductor-on-insulator structures and devices; 2. the physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on-Si oxide, graphite inner films fabricated by ion implantation, and others. The second part presents new devices based upon impact ionization near to the source junction, the modeling of charge transport in nano-scale SOI MOSFETs, the electrical properties of SOI MOSFETs with LaLuO3 high-k gate dielectric and the study of neutron effects upon the behavior of nanometer-scale SOI devices. The third part considers various types of SOI sensors and MEMS, together with their characteristics and applications. The fourth part describes the fabrication and properties of quantum-dimensional structures such as nanowires and nanodots. This book will therefore be useful to a wide readership.
Table of Contents (21 papers, 10 per page listed)
- ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications
- Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures
- Diamond - Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing
- Hydrogen Gettering within Processed Oxygen-Implanted Silicon
- Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model
- Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels
- Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs
- High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs
- Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures
- Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs
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