DUBLIN--(BUSINESS WIRE)--Research and Markets (http://www.researchandmarkets.com/research/t97j5l/highk_gate_dielec) has announced the addition of John Wiley and Sons Ltd's new book "High-k Gate Dielectrics for CMOS Technology" to their offering.
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions.
The book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting devices, and an outlook towards future transistor stacking technology.
Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
Key Topics Covered:
Scaling and Limitations of Si-based CMOS
Oxide Reliability Issues
Development and Limitations of Silicon Oxynitride Gate Dielectrics
High-k Gate Dielectrics: Why Do We Need Them?
Materials Issues for High-k Gate Dielectrics Selection and Integration
High-k Gate Dielectrics Deposition Technology
Atomic-scale Characterization Methods in High-k/Si Gate Stacks
Electronic Structure and Band Offsets of Alternative High-k Gate Dielectrics
Issues of Dipole Layers Formed in High-k/Si Interfaces
Physicochemical Properties of Selected 4d, 5d and Rare Earth Metals in Silicon
Integration and Challenges of Hf-based High-k Gate Dielectrics
Integration and Challenges of La-based High-k Gate Dielectrics
Integration and Challenges of Perovskite-structured Oxide Gate Dielectrics
Issues in Metal Gate Electrode Selection for Bulk CMOS Devices
Advances and Challenges in Gate Electrodes
High-k Gate Dielectric Materials Integrated Circuit Device Design Issues
Future Gate stack Technology for the 22nm Node and Beyond
For more information visit http://www.researchandmarkets.com/research/t97j5l/highk_gate_dielec
Source: John Wiley and Sons Ltd