TOKYO--(BUSINESS WIRE)--Toshiba Corporation (TOKYO:6502) has launched a low-ON-resistance, low-leakage power MOSFET using the latest trench MOS process as an addition to the MOSFET lineup for automotive applications. The new product, "TK100S04N1L", achieves low ON-resistance with a combination of the latest 8th generation trench MOS process "U-MOS VIII-H series" chip and the "DPAK+" package that utilizes Cu (copper) connectors. The product is primarily suited for automotive applications, especially for those demanding high-speed switching, such as motor drives and switching regulators. Samples are available now with mass production scheduled to start in March 2013.
| Polarity | Part number |
Drain-to-source voltage |
Drain Current |
Series | ||||
| Nch | TK100S04N1L | 40 | 100 | U-MOS VIII-H | ||||
| Key Features |
| 1. Low ON-resistance: RDS(ON) = 1.9mΩ (typ.) (VGS=10V) |
| 2. Low leakage current: IDSS=10μA (max) (VDS=rated voltage) |
| 3. "DPAK+" package that realizes low-ON-resistance by utilizing Cu connectors. |
| 4. Tch = 175°C guaranteed |
*Follow this link for more on this product.
http://www.semicon.toshiba.co.jp/eng/product/transistor/selection/topics/1268084_2470.html
| Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice. |
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